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2Gb: x16, x32 Mobile LPDDR2 SDRAM S4
AC Timing
Table 86: AC Timing (Continued)
Notes 1–2 apply to all parameters and conditions. AC timing parameters must satisfy the t CK minimum conditions (in mul-
tiples of t CK) as well as the timing specifications when values for both are indicated.
Min/M t CK
Data Rate
Parameter
Exit power-down to next valid
Symbol
t XP
ax
MIN
Min
2
1066
7.5
933
7.5
800
7.5
667
7.5
533
7.5
400
7.5
333
7.5
Unit Notes
ns
command delay
LPDDR2-S4 CAS-to-CAS delay
t CCD
MIN
2
2
2
2
2
2
2
2
t CK(a
vg)
LPDDR2-S2 CAS-to-CAS delay
t CCD
MIN
1
1
1
1
1
1
1
1
t CK(a
vg)
Internal READ to PRECHARGE
t RTP
MIN
2
7.5
7.5
7.5
7.5
7.5
7.5
7.5
ns
command delay
RAS-to-CAS delay
t RCD
Fast
3
15
15
15
15
15
15
15
ns
TYP
3
18
18
18
18
18
18
18
Row precharge time (single
bank)
Row precharge time (all banks)
Row precharge time (all banks)
Row active time
WRITE recovery time
Internal WRITE-to-READ
t RPpb
t RPpab
4-bank
t RPpab
8-bank
t RAS
t WR
t WTR
Fast
TYP
Fast
TYP
Fast
TYP
MIN
MAX
MIN
MIN
3
3
3
3
3
3
3
–
3
2
15
18
15
18
18
21
42
70
15
7.5
15
18
15
18
18
21
42
70
15
7.5
15
18
15
18
18
21
42
70
15
7.5
15
18
15
18
18
21
42
70
15
7.5
15
18
15
18
18
21
42
70
15
7.5
15
18
15
18
18
21
42
70
15
10
15
18
15
18
18
21
42
70
15
10
ns
ns
ns
ns
μ s
ns
ns
command delay
Active bank a to active bank b
Four-bank activate window
Minimum deep power-down
t RRD
t FAW
t DPD
MIN
MIN
MIN
2
8
–
10
50
500
10
50
500
10
50
500
10
50
500
10
50
500
10
50
500
10
60
500
ns
ns
μ s
time
Temperature Derating 16
t DQSCK
derating
t DQSCK
MAX
–
5620
6000 6000 6000 6000 6000 6000
ps
(derated)
PDF: 09005aef83f3f2eb
2gb_mobile_lpddr2_s4_g69a.pdf – Rev. N 3/12 EN
146
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2010 Micron Technology, Inc. All rights reserved.
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